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The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001.
INCH POUND MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997
PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS1N4148-1 (see 6.4). Device types 1N914 and 1N4531 are inactive for new design.
This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device. 1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5. 1.3 Maximum ratings.
Type V(BR) VRWM Io TA = 25qC mA 75 (1) 125 (2) 200 (3) 200 (3) IFSM tp = 1/120 s A (pk) 1 1 2 2 TSTG Top Z6JX R6JL R6JC
V dc 1N914, UR 1N4531, UR 1N4148-1, UR-1 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 100 100 100 100
V (pk) 75 75 75 75
qC
-65 to +200 -65 to +200 -65 to +200 -65 to +200
qC
-65 to +175 -65 to +175 -65 to +200 -65 to +200
qC/W
70 70 70 70
qC/W
250 (leaded) 100(UR)
qC/W
N/A N/A N/A 150
(1) Derate at 0.5 mA/GC above TA = 25GC. (2) Derate at 0.83 mA/GC above TA = 25GC. (3) Derate at 1.14 mA/GC above TA = 25GC. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/116L
1.4 Primary electrical characteristics at TA = +25GC, unless otherwise indicated. Type (1) IF mA dc 1N914 1N4148-1 1N4531 10 10 10 VF1 V dc 0.8 0.8 0.8 IF mA dc 50 100 100 VF2 V dc 1.2 1.2 1.2
IR1 at VR = 20 V dc IR2 at VR = 75 V dc
nA dc 25 25 25
2A dc
0.5 0.5 0.5
Type (1)
IR3 at VR = 20 V dc TA = 150GC 2A dc 35 35 35
IR4 at VR = 75 V dc TA = 150GC 2A dc 75 75 75
tfr at Vfr = 5.0 V dc (pk) and IF = 50 mA dc ns 20 20 20
trr
ns 5 5 5
1N914 1N4148-1 1N4531
(1) Electrical characteristics for surface mount devices are equivalent to the corresponding non-surface mount devices unless otherwise noted. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 Test Methods for Semiconductor Devices. Semiconductor Devices, General Specification for.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
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MIL-PRF-19500/116L
Types Ltr 1N4148-1 1N914 BL BD LL LD BL BD LL LD
Dimensions Inches Min Max .140 .180 .056 .075 1.000 1.500 .018 .022 .080 .120 .050 .075 1.000 1.500 .018 .022 Millimeters Min Max 3.56 4.57 1.42 1.90 25.40 38.10 0.46 0.56 2.03 3.05 1.27 1.90 25.40 38.10 0.46 0.56
Notes 1, 2
3 4 5 4 5
1N4531
NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Ferrule is optional on types 1N4148-1 and 1N4531 for dimension BL. 4. The minimum dimension of BD shall apply over at least .075 (1.90 mm) of dimension BL. 5. The specified lead diameter applies in the zone between .050 (1.27 mm) for 1N914, and 1N4148-1, and .010 (0.25mm) for 1N4531 from the diode body to the end of the lead. Outside of this zone the lead shall not exceed BD.
FIGURE 1. Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531.
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MIL-PRF-19500/116L
Symbol Inches BD ECT BL S Min .063 .016 .130
Dimensions Max .067 .022 .146 .001 min Min 1.60 0.41 3.30 Millimeters Max 1.70 0.55 3.70 0.03 min
NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions 1N914UR, 1N4148UR-1, AND 1N4531UR.
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MIL-PRF-19500/116L
1 3 1N4148UBCA 2 3 1 2 1N4148UB
1 3 2 1N4148UBD
1 3 2 1N4148UBCC
Symbol A A1 B1 B2 B3 D
Inches Min Max 0.046 0.056 0.017 0.023 0.016 0.024 0.016 0.024 0.016 0.024 0.085 0.105
Millimeters Min Max 0.97 1.42 0.43 0.58 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.67
Dimensions Symbol D1 D2 D3 E E3 L1 L2
Inches Min Max 0.071 0.078
Millimeters Min Max 1.81 2.01
0.115 --0.022 0.024
0.125 0.038 0.036
2.82 --0.56 0.61
3.18 0.96 0.81
NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Ceramic package only.
FIGURE 3. Physical dimensions, surface mount (UB versions).
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MIL-PRF-19500/116L
Symbol A A1 B1 B2 R2 D D1 D2 D3 E E3 L1 R3 R1
Inches Min 0.046 0.017 0.016 0.016 0.012 0.085 0.071 0.035 0.085 0.115 --0.022 0.008R 0.022R
Dimensions Millimeters Max Min Max 0.056 0.97 1.42 0.035 0.43 0.89 0.024 0.41 0.61 0.024 0.41 0.61 0.3 0.108 2.41 2.74 0.078 1.81 2.01 0.039 0.89 0.99 0.108 2.41 2.74 0.128 2.82 3.25 0.128 --3.25 0.038 0.56 0.96 0.2R 0.55R
Note
Typ Typ Typ
NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only.
FIGURE 4. Physical dimensions, surface mount (2 pin UB version).
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MIL-PRF-19500/116L
Dimensions Ltr Min A B .0059 .0130 Inches Max .0061 .0170 Millimeters Min .150 .330 Max .155 .430
NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Element evaluation accomplished utilizing TO-5 package. 4. The physical characteristics of the die are: Metallization: Top (anode): Al. Back (cathode): Au. Al thickness: 25,000 A minimum. Gold thickness: 4,000 A minimum. Chip thickness: .010 inches (.25 mm) H.002 inches (.05 mm).
FIGURE 5. Physical dimensions, JANHCA and JANKCA die.
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MIL-PRF-19500/116L
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. Vfr LS UB UR Forward recovery voltage. Specified maximum forward voltage used to determine forward recovery time. Lead spacing distance between device body and electrical/mechanical contact on lead. Hermetic unleaded 3 terminal (LCC, Leadless Chip Carrier) package type. Unleaded round package type designation.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded double plug construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). The UB package shall be wire bonded, eutectically mounted devices. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.7.1 UR devices. "UR" devices shall be marked with a cathode band only. Initial container package marking shall be in accordance with MIL-PRF-19500. 3.7.2 UB devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification and date code shall be marked on the devices. 3.7.3 UBR devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification and date code shall be marked on the devices. 3.8 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color coding will be permitted. UB packages do not require polarity marking. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance.
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MIL-PRF-19500/116L
4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E inspection. Group E inspection shall be in accordance with MIL-PRF-19500 and table II herein. 4.3 Screening (JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV of MIL-PRF-19500) 3a Measurement JANTX and JANTXV levels Temperature cycling
JAN level Temperature cycling in accordance with MIL-PRF-19500 TX level. Thermal impedance (see 4.5.5) Not applicable Not applicable Not applicable Not applicable Not applicable
3c (1) 9 10 (2) 11 12 13
Thermal impedance (see 4.5.5) Not applicable Method 1038, condition A, t = 48 hours IR1 and VF1 See 4.3.1, t = 48 hours
'IR1 = 100 percent of initial reading or 15 nA, whichever is greater; 'VF1 = 25 mV dc.
PDA = 10 percent
(3) Subgroup 2 of table I herein;
(1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) Test within 24 hours after removal from test. (3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. 4.3.1 Burn-in test conditions. Burn-in conditions are as follows:
Type 1N914, 1N914UR 1N4531, 1N4531UR 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2 TA +30qC r5qC VRWM = 75 V (pk) f = 50 - 60 Hz IO = 75 mA IO = 125 mA IO = 200 mA TA = +30qC
r5qC
IF =150 mA min IF = 175 mA min IF = 200 mA min
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MIL-PRF-19500/116L
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test. 4.4.2.1 Group B inspection, table VIb (JANTX, JANTXV) of MIL-PRF-19500. Subgroup B2 Method 2005 Conditions IF = 100 mA, axial tensile stress = 8 lbs, TA = +150GC; (not applicable to UR or UB package). (This test shall be performed as the first test of subgroup 2). TA = +30GC H5GC, VRWM = 75 V(pk), f = 50-60 Hz (see 4.5.1); 1N914: IO = 5 mA, 1N4531: IO = 125 mA, 1N4148-1: IO = 200 mA. See 4.5.4 herein. R6JL = 250GC/W, .375 inch (9.52 mm) lead length (non-surface mount). R6JL 100GC/W (UR), R6JC = 150GC/W (UB).
B3
1027
B4 B5
2075 3101 or 4081
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test. Subgroup C2 C2 Method 1056 2036 Conditions 100 cycles. Tension: Test condition A, t = 15 seconds, weight = 10 pounds. Lead fatigue: Test condition E. Terminal strength and lead fatigue not applicable to UB or UR devices. TA = +30GC H5GC, VRWM = 75 V(pk), f = 50-60 Hz (see 4.5.1), for: 1N914 IO = 75 mA. 1N4531 IO = 125 mA. 1N4148-1 IO = 200 mA.
C6
1026
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be specified in section 4 of MIL-STD-750. 4.5.2 Life tests. AC tests shall be conducted with a half-sine wave of the peak voltage specified herein impressed across the diode in the reverse direction, followed by a half-sine waveform of the average rectified current specified herein. The forward conduction angle of the rectified current shall be not greater than 180 degree nor less than 150 degree.
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MIL-PRF-19500/116L
4.5.3 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between zero time and the point where the pulse has decreased to 110 percent of the steady-state value of VF when IF = 50 mA dc. The maximum rise time of the response detector shall be 1 ns. 4.5.4 Decap internal visual scribe and break (not applicable to UB package). Scratch glass at cavity area with diamond scribe. Carefully snap open. Using 30X magnification examine the area where die was in contact with the plugs, verify footprint for minimum of 15 percent metallurgical bonding area. In addition, a cross sectional view may be used to verify consistency of construction. A cross sectional view shall be used exclusively for construction verification and shall not be used to verify bond integrity. The UB package shall employ the manufacturers' normal delidding procedures. 4.5.5 Thermal impedance (Z6JX measurements). Thermal impedance measurements shall be in accordance method 3101 MIL-STD-750, and as follows.
a. b. c. d.
IH = 300 mA to 500 mA. tH = 10 ms. IM = 1 mA to 10 mA. tMD = 70 2s maximum.
The maximum limit for Z6JX under these test conditions is Z
6JX = 70GC/W.
4.5.5.1 For initial qualification or requalification. Read and record data (Z6JX) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty two samples shall be serialized and provided to the qualifying activity for test correlation. 4.5.6 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 MIL-STD-750, or method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for R6JL under these test conditions shall be as shown in group B of 4.4.2.1 and group E of table II. The following conditions shall apply when using method 3101: a. b. c. d. IH - - - - - - - - - - - - - - - - - - - - - - - - - - - 75 mA to 300 mA. tH - - - - - - - - - - - - - - - - - - - - - - - - - - - 25 seconds minimum. IM - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 mA to 10 mA. tMD - - - - - - - - - - - - - - - - - - - - - - - - - - 70 2s maximum.
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MIL-PRF-19500/116L
4.5.6.1 Lead spacing for leaded devices: LS = Lead spacing = .375 inch (9.53 mm) as defined on figure 6.
FIGURE 6. Mounting conditions.
4.5.6.2 Temperature reference (Tr ) unleaded devices (UB, UR suffix). The temperature reference point shall be the hottest portion of the external surface. As an alternate, the temperature of a stream of liquid used to cool the device during the test may be used as the temperature reference point.
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MIL-PRF-19500/116L
TABLE I. Group A inspection.
MIL-STD-750 Inspection 1/ Method Conditions Symbol Min Limits Max Unit
Subgroup 1 Visual and mechanical inspection Subgroup 2 Thermal impedance Forward voltage Breakdown voltage Reverse current 1N914 1N4531 1N4148-1 Reverse current 4016 3101 4011 4021 4016 See 4.5.5 IF = 10 mA dc IR = 100 Z6JX VF1 VBR1 IR1 25 25 25 IR2 VF2 IF = 50 mA dc IF = 100 mA dc IF = 100 mA dc Subgroup 3 High temperature operation: Reverse current 1N914 1N4531 1N4148-1 Reverse current 1N914 1N4531 1N4148-1 Forward voltage 1N914 1N4531 1N4148-1 4016 TA = +150qC DC method VR = 20 V dc 35 1.2 1.2 1.2 V dc V dc V dc 500 nA dc nA dc nA dc nA dc 100 70 0.8 2071
qC/W
V dc V dc
PA dc
DC method VR = 20 V dc
DC method VR = 75 V dc
Forward voltage
4011
IR3
PA dc
4016
DC method VR = 75 V dc
IR4 75 75 75 VF3 0.8 0.8 0.8 V dc V dc V dc
PA dc PA dc PA dc
4011
IF = 10 mA dc
See footnote at end of table.
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MIL-PRF-19500/116L
TABLE I. Group A inspection - Continued.
MIL-STD-750 Inspection 1/ Method Conditions Symbol Min Limits Max Unit
Subgroup 3 Continued
Low temperature operation:
Forward voltage 1N914 1N4531 1N4148-1 Subgroup 4 Junction capacitance 4001 4011
TA = -55qC VF4
IF = 50 mA dc IF = 100 mA dc IF = 100 mA dc 1.3 1.3 1.3 V dc V dc V dc
VR = 0 V dc, f = 1 MHz, Vsig = 50 mVp-p maximum
C1 4.0 4.0 4.0 pF pF pF pF
1N914 1N4531 1N4148-1 Junction capacitance 4001 VR = 1.5 V dc, f = 1 MHz, Vsig = 50 mVp-p maximum Condition A C > 1 nF, IF = IR = 10 mA dc, RL = 100: r5% IR(REC) = 1.0 mA dc, R t 1000:. C2
2.8
Reverse recovery time
4031
trr
5
ns
1N914 1N4531 1N4148-1 Subgroup 5
Not applicable See footnote at end of table.
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MIL-PRF-19500/116L
TABLE I. Group A inspection - Continued.
Inspection 1/ Method MIL-STD-750 Conditions Symbol Limits Min Max Unit
Subgroup 6 Surge current 4066 Condition A (sine wave) if(surge) = 1 A (pk) for 1N914 and 1N4531 if(surge) = 2 A (pk) for 1N4148-1, UR and 1N4148UB, IO = maximum rated dc current = 0 VRM = 0 10 surges, 8.3 ms width each, one surge per minute, TA = +25qC or Condition B (square wave) IF(surge) = 0.704 A (pk) for 1N914, 1N4531, and 1N4148UB IF(surge) = 1.41 A (pk) for 1N4148-1 tp = 8.3 ms n = 10 d.f. = 0.0055% TA = 25qC See table I, subgroup 2
Electrical measurements Subgroup 7 Forward recovery voltage and time 4026
IF = 50 mA dc (see 4.5.2)
Vfr tfr
5.0 20
V (pk) ns
1/ For sampling plan, see MIL-PRF-19500.
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MIL-PRF-19500/116L
TABLE II. Group E inspection (all quality levels) for qualification only.
MIL-STD-750 Conditions
Inspection 1/
Method
Sampling plan
Subgroup 1 Thermal shock glass strain) Electrical measurements Subgroup 2 Intermittent operating life Electrical measurements Subgroup 3 Not applicable Subgroup 4 Thermal resistance surface mount 3101 or 4081 R"JEC = 100qC/W (maximum) at zero lead length (for UR), R"JEC = 150q C/W (maximum) for UB. (see 4.5.6), +25qC d TR d +35qC 1037 10,000 cycles 1056 1,000 cycles
45 devices c = 0
See table I, subgroup 2 45 devices c = 0
See table I, subgroup 2
22 devices
c=0
Thermal resistance leaded devices
3101 or 4081
+25qC d TR d +35qC, (see 4.5.6) tH t 25s in still air. 22 devices c=0
R"JEC = 250qC/W (maximum)
Subgroup 5 Monitored mission temperature cycling Electrical measurements 1055 Not required for UB suffix devices.
See table I, subgroup 2
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5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. b. Title, number, and date of this specification. Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). Packaging requirements (see 5.1). Lead finish (see 3.4.1). Type designation and product assurance level.
c. d. e.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Cross reference substitution information. The JANS version of 1N6638, 1N6642, or 1N6643 (MIL-S-19500/578) is preferred in lieu of the JANS1N4148-1. The JANS 1N6638 or 1N6642 is substitutable for the JANS 1N4148-1 and shall be used in lieu of the JANS1N4148-1. A PIN for PIN replacement table follows, and these devices are directly interchangeable.
JANS Non-preferred PIN 1N4148-1
JANS superseded PIN 1N6638 1N6642
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MIL-PRF-19500/116L
6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA1N4148) will be identified on the QPL. JANC ordering information PIN 55801 1N4148-1 1N4148-1 JANHCA1N4148 JANKCA1N4148 Manufacturer
6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes.
Custodians: Army - CR Navy - NW Air Force - 11 DLA - CC Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 19, 99
Preparing activity DLA - CC
(Project 5961-2422)
18
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. 1. DOCUMENT NUMBER MIL-PRF-19500/116K 2. DOCUMENT DATE 13 July 2001
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center, Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99

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